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Project Title2010-092 Voltage-Gated Bipolar Transistor for Power Switching Applications
Track Code2010-092
Short Description

A Rutgers University electrical engineering professor has designed a novel Voltage Gated Bi-polar Transistor (VGBT) power switching device that offers all the desired characteristics of an IGBT without the fundamental problems. In general, SiC power devices have advantageous properties including a wider band gap, larger critical electric field, and higher thermal conductivity allowing them to operate at higher temperatures and voltages, in addition to higher power and current density over the pure Si devices. These properties allow the SiC discrete devices to operate at much higher voltage levels, which are difficult for Silicon devices. SiC based devices also help in reducing conduction and switching losses, thus offering higher efficiencies in electronic systems.

Abstract

A recent GBI Research report on the Discrete Power Semiconductor device market (forecasting up to 2020) shows an increased demand from the Hybrid Electric Vehicles, Solar, and Wind Energy markets. Although the majority of the market is dominated by Silicon MOSFETs and Insulated Gate Bipolar Transistors (IGBT), Silicon Carbide (SiC) has emerged as a viable replacement due to its advantages over conventional Silicon devices. SiC is 700X better than Si for power semiconductor switching, improves efficiency of a device by more than 20%, and facilitates the production and usage of devices with much smaller form factor. However, SiC IGBTs suffer from three fundamental problems: (i) low gate oxide reliability, (ii) long term threshold voltage drift and (iii) low channel mobility. A Rutgers University electrical engineering professor has designed a novel Voltage Gated Bi-polar Transistor (VGBT) power switching device that offers all the desired characteristics of an IGBT without the three fundamental problems mentioned above. In general, SiC power devices have advantageous properties including a wider band gap, larger critical electric field, and higher thermal conductivity allowing them to operate at higher temperatures and voltages, in addition to higher power and current density over the pure Si devices. These properties allow the SiC discrete devices to operate at much higher voltage levels, which are difficult for Silicon devices. SiC based devices also help in reducing conduction and switching losses, thus offering higher efficiencies in electronic systems.

 
Tagsautomotive, and solar inverters used in solar PV generation., power supply units in appliances
 
Posted DateJul 23, 2012 4:19 PM

Researcher

Name
Jian Zhao

Manager

Name
Rick Smith

Market Applications